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BS870
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R GS ? 1.0M ?
Symbol
V DSS
V DGR
Value
60
60
Units
V
V
Gate-Source Voltage
Drain Current (Note 6)
Continuous
Continuous
V GSS
I D
? 20
250
V
mA
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R ? JA
T J , T STG
Value
300
417
-55 to +150
Units
mW
? C/W
? C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
60
?
?
80
?
?
?
0.5
? 10
V
μA
nA
V GS = 0V, I D = 100 ? A
V DS = 25V, V GS = 0V
V GS = ? 15V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
V GS(th)
R DS (ON)
I D(ON)
g FS
1.0
?
0.5
80
2.0
3.5
1.0
?
3.0
5.0
?
?
V
?
A
mS
V DS = V GS , I D = 250 ? A
V GS = 10V, I D = 0.2A
V GS = 10V, V DS = 7.5V
V DS =10V, I D = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
22
11
2.0
50
25
5.0
pF
pF
pF
V DS = 10V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t D(ON)
t D(OFF)
?
?
2.0
5.0
20
20
ns
ns
V ES = 10V, R L = 150 ? ,
V DS = 10V, R D = 100 ?
Notes:
6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on
our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
BS870
Document number: DS11302 Rev. 18 - 2
2 of 5
www.diodes.com
August 2013
? Diodes Incorporated
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